The Physics and Engineering of Nanodevices (PEN) group (Catalan Institute of Nanoscience and Nanotechnology, ICN2) is seeking to appoint a creative and motivated Scientist/Engineer to develop and deliver Molecular Beam Epitaxy (MBE) solutions. The appointed candidate will be responsible for performing epitaxial growth and characterization of semiconducting compounds and heterostructures. The compounds include topological insulators (TI) of the (Bi,Sb)2(Se,Te)3 family of materials and transition metal dichalcogenides (TMDC). S/he will carry out process development, documentation of processes and implement the necessary maintenance of growth-lab and ancillary equipment. S/he will interface with the other PEN members, focused on (electronic) devices that use the grown heterostructures, and with Laboratory Engineers that are in charge of the common facilities at the ICN2. The latter include x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), angle-resolved photoemission spectroscopy (ARPES), and scanning and transmission electron microscopy.

The position will be funded by a European FET-Proactive project coordinated by Prof. Sergio O. Valenzuela, leader of the PEN group. The appointment is initially for a period of 2 years with a possibility of extension.

For more information on Responsibilities and required Qualifications, follow this link.

To apply go to ICN2 jobs website.