The Physics and Engineering of Nanodevices (PEN) group (Catalan Institute of Nanoscience and Nanotechnology, ICN2) is seeking to appoint a creative and motivated Scientist/Engineer to develop and deliver Molecular Beam Epitaxy (MBE) solutions. The appointed candidate will be responsible for performing epitaxial growth and characterization of semiconducting compounds and heterostructures. The compounds include topological insulators (TI) of the (Bi,Sb)2(Se,Te)3 family of materials and transition metal dichalcogenides (TMDC). S/he will carry […]

We report a bottom-up method to synthesize nanoporous graphene comprising an ordered array of pores separated by ribbons, which can be tuned down to the 1-nanometer range. The size, density, morphology, and chemical composition of the pores are defined with atomic precision by the design of the molecular precursors. The electronic characterization further reveals a highly anisotropic electronic structure, where orthogonal one-dimensional electronic bands with an energy gap of ∼1 […]

We propose and demonstrate that a carrier thermal gradient in a graphene lateral spin valve can lead to a large increase of the spin voltage near to the graphene charge neutrality point. Such an increase results from a thermoelectric spin voltage, which is analogous to the voltage in a thermocouple and that can be enhanced by the presence of hot carriers generated by an applied current. These results could prove […]

A large enhancement in the spin–orbit coupling of graphene has been predicted when interfacing it with semiconducting transition metal dichalcogenides. Signatures of such an enhancement have been reported, but the nature of the spin relaxation in these systems remains unknown. Here, we unambiguously demonstrate anisotropic spin dynamics in bilayer heterostructures comprising graphene and tungsten or molybdenum disulphide (WS2, MoS2). We observe that the spin lifetime varies over one order of […]

One of the most fascinating puzzles for the graphene and spintronics communities is identifying the main microscopic process for spin relaxation in graphene. Conventional relaxation mechanisms have yielded contradictory results when applied to single-layer graphene. In an article published today in Nature Communications, researchers from the Institut Català de Nanociència i Nanotecnologia (ICN2) determine the spin lifetime anisotropy of spin-polarized carriers in graphene, which is expected to generate valuable information […]

The PEND group has been invited to participate in the European Commission Graphene Flagship project. This invitation recognizes the recent results by the group on spintronics and, more specifically, those involving graphene. The participation in this project will help strengthen the resources of the group to work on graphene spintronics as well as the collaboration with the main teams working in this field across Europe. About the EC Graphene Flagship […]

Our review article on spin Hall effects just appeared on the cover of the last issue of Reviews of Modern Physics (October-December 2015). Link to the publication

We review current challenges and perspectives in graphene spintronics, which is one of the most promising directions of innovation, given its room-temperature long-spin lifetimes and the ability of graphene to be easily interfaced with other classes of materials (ferromagnets, magnetic insulators, semiconductors, oxides, etc), allowing proximity effects to be harvested. Link to publication

Following the success of “Spin Current” (Oxford University Press) co-edited by S. Maekawa, S. O. Valenzuela, E. Saitoh, and T. Kimura, the book has been made available in paperback format (Link).