Non-volatile magnetic random-access memories (MRAMs), such as spin-transfer torque MRAM and next-generation spin–orbit torque MRAM, are emerging as key to enabling low-power technologies, which are expected to spread over large markets from embedded memories to the Internet of Things. Concurrently, the development and performances of devices based on two-dimensional van der Waals heterostructures bring ultracompact multilayer compounds with unprecedented material-engineering capabilities. Here we provide an overview of the current developments […]

The large variety of 2D materials and their co-integration in van der Waals heterostructures enable innovative device engineering. In addition, their atomically thin nature promotes the design of artificial quantum materials by proximity effects that originate from short-range interactions. Such a designer approach is particularly compelling for spintronics, which typically harnesses functionalities from thin layers of magnetic and non-magnetic materials and the interfaces between them. In our recent Nature Nanotechnology […]

Spintronic devices exploit the spin, as well as the charge, of electrons and could bring new capabilities to the microelectronics industry. However, in order for spintronic devices to meet the ever-increasing demands of the industry, innovation in terms of materials, processes and circuits are required. In an article in Nature Electronics, we review recent developments in spintronics that could soon have an impact on the microelectronics and information technology industry. […]

Spin–orbit coupling stands as a powerful tool to interconvert charge and spin currents and to manipulate the magnetization of magnetic materials through spin-torque phenomena. However, despite the diversity of existing bulk materials and the recent advent of interfacial and low-dimensional effects, control of this interconversion at room temperature remains elusive. In an article published in Nature Materials we demonstrate strongly enhanced room-temperature spin-to-charge interconversion in graphene driven by the proximity […]

We report in the journal Science a bottom-up method to synthesize nanoporous graphene comprising an ordered array of pores separated by ribbons, which can be tuned down to the 1-nanometer range. The size, density, morphology, and chemical composition of the pores are defined with atomic precision by the design of the molecular precursors. The electronic characterization further reveals a highly anisotropic electronic structure, where orthogonal one-dimensional electronic bands with an […]

We propose and demonstrate that a carrier thermal gradient in a graphene lateral spin valve can lead to a large increase of the spin voltage near to the graphene charge neutrality point. Such an increase results from a thermoelectric spin voltage, which is analogous to the voltage in a thermocouple and that can be enhanced by the presence of hot carriers generated by an applied current. These results could prove […]

A large enhancement in the spin–orbit coupling of graphene has been predicted when interfacing it with semiconducting transition metal dichalcogenides. Signatures of such an enhancement have been reported, but the nature of the spin relaxation in these systems remains unknown. Here, we unambiguously demonstrate anisotropic spin dynamics in bilayer heterostructures comprising graphene and tungsten or molybdenum disulphide (WS2, MoS2). We observe that the spin lifetime varies over one order of […]

One of the most fascinating puzzles for the graphene and spintronics communities is identifying the main microscopic process for spin relaxation in graphene. Conventional relaxation mechanisms have yielded contradictory results when applied to single-layer graphene. In an article published today in Nature Communications, researchers from the Institut Català de Nanociència i Nanotecnologia (ICN2) determine the spin lifetime anisotropy of spin-polarized carriers in graphene, which is expected to generate valuable information […]

The PEND group has been invited to participate in the European Commission Graphene Flagship project. This invitation recognizes the recent results by the group on spintronics and, more specifically, those involving graphene. The participation in this project will help strengthen the resources of the group to work on graphene spintronics as well as the collaboration with the main teams working in this field across Europe. About the EC Graphene Flagship […]

Our review article on spin Hall effects just appeared on the cover of the last issue of Reviews of Modern Physics (October-December 2015). Link to the publication